AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

Toshio Nishida*, Toshiki Makimoto, Hisao Saito, Tomoyuki Ban

*この研究の対応する著者

研究成果: Article査読

55 被引用数 (Scopus)

抄録

The GaN-free UV-LED structure was applied to a bulk AlN substrate which has high thermal conductivity. The potential of this structure to the high current injection operation was confirmed. The output power linearly increased up to 300 mA and this saturation current is about twice that of the LED grown on sapphire substrate. The emission spectrum was found to be stable.

本文言語English
ページ(範囲)1002-1003
ページ数2
ジャーナルApplied Physics Letters
84
6
DOI
出版ステータスPublished - 2004 2月 9
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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