Alignment and switching behaviors of liquid crystal on a-Si Ox thin films deposited by a filtered cathodic arc process

P. J. Martin*, A. Bendavid, C. Comte, H. Miyata, Y. Asao, Y. Ishida, A. Sakai

*この研究の対応する著者

研究成果: Article査読

22 被引用数 (Scopus)

抄録

A new method is described for the preparation of silicon oxide layers, which produces vertical alignment of liquid crystal with controlled pretilt angles, by a reactive filtered cathodic arc deposition under oblique incidence geometry. The pretilt angle is dependent on the angle of deposition, but is not simply caused by the surface roughness. The achievable pretilt angle by this method is ∼5.5°, which allows uniform switching behavior under an applied electric field.

本文言語English
論文番号063516
ジャーナルApplied Physics Letters
91
6
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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