Alignment and switching behaviors of liquid crystal on a-Si Ox thin films deposited by a filtered cathodic arc process

P. J. Martin; A. Bendavid; C. Comte; H. Miyata; Y. Asao; Y. Ishida; A. Sakai

doi:10.1063/1.2768308

Alignment and switching behaviors of liquid crystal on a-Si Ox thin films deposited by a filtered cathodic arc process

P. J. Martin^*, A. Bendavid, C. Comte, H. Miyata, Y. Asao, Y. Ishida, A. Sakai

^*この研究の対応する著者

研究成果: Article › 査読

22 被引用数 (Scopus)

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A new method is described for the preparation of silicon oxide layers, which produces vertical alignment of liquid crystal with controlled pretilt angles, by a reactive filtered cathodic arc deposition under oblique incidence geometry. The pretilt angle is dependent on the angle of deposition, but is not simply caused by the surface roughness. The achievable pretilt angle by this method is ∼5.5°, which allows uniform switching behavior under an applied electric field.

本文言語	English
論文番号	063516
ジャーナル	Applied Physics Letters
巻	91
号	6
DOI	https://doi.org/10.1063/1.2768308
出版ステータス	Published - 2007
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.2768308

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AU - Martin, P. J.

AU - Bendavid, A.

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AU - Miyata, H.

AU - Asao, Y.

AU - Ishida, Y.

AU - Sakai, A.

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Alignment and switching behaviors of liquid crystal on a-Si Ox thin films deposited by a filtered cathodic arc process

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