Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

Tamotsu Hashizume, Sanguan Anantathanasarn, Noboru Negoro, Eiichi Sano, Hideki Hasegawa, Kazuhide Kumakura, Toshiki Makimoto

研究成果: Article査読

74 被引用数 (Scopus)

抄録

An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

本文言語English
ページ(範囲)L777-L779
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
6 B
DOI
出版ステータスPublished - 2004 6 15
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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