Al₂O₃ insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

Engineering & Materials Science

• High electron mobility transistors 100%
• Aluminum oxide 82%
• Surface potential 39%
• Drain current 36%
• MOSFET devices 33%
• Threshold voltage 31%

Physics & Astronomy

• barrier layers 93%
• field effect transistors 67%
• leakage 23%
• threshold voltage 13%