The authors applied a wide-band-gap (2.9 eV) molecule of 4,- 4′ -bis(styryl)biphenyl (BSBP) as an active layer in light-emitting organic field-effect transistors. They found that BSBP provided both relatively high field-effect hole mobility of 0.01 cm2 V s and photoluminescence efficiency of 20% in thin film. They achieved ambipolar operation by without breaking vacuum through devices' preparation and measurements, applying aluminum contacts, and inserting a hydroxyl-free poly(methylmethacrylate) layer, and light emission was observed when the device was operated in the ambipolar mode. The results presented here will open the way to fabricating efficient light-emitting transistors with high mobility.
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