Ambipolar organic field-effect transistors based on rubrene single crystals

Tetsuo Takahashi, Taishi Takenobu, Jun Takeya, Yoshihiro Iwasa

研究成果: Article

150 引用 (Scopus)

抜粋

We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p - and n -channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1× 10-2 cm2 V s, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6 eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.

元の言語English
記事番号033505
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
88
発行部数3
DOI
出版物ステータスPublished - 2006
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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