Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

Junjun Jia, Yoshifumi Torigoshi, Emi Kawashima, Futoshi Utsuno, Koki Yano, Yuzo Shigesato

研究成果: Article査読

17 被引用数 (Scopus)

抄録

This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O2, H2O, and N2O as the reactive gases. Experimental results show that the electrical properties of the N2O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N2O introduction into the deposition process, where the field mobility reach to 30.8 cm2 V-1 s-1, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

本文言語English
論文番号023502
ジャーナルApplied Physics Letters
106
2
DOI
出版ステータスPublished - 2015 1 12
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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