An all-solid-state pH sensor employing fluorine-terminated polycrystalline boron-doped diamond as a pH-insensitive solution-gate field-effect transistor

Yukihiro Shintani*, Mikinori Kobayashi, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

本文言語English
論文番号1040
ジャーナルSensors (Switzerland)
17
5
DOI
出版ステータスPublished - 2017 5 5

ASJC Scopus subject areas

  • 分析化学
  • 生化学
  • 原子分子物理学および光学
  • 器械工学
  • 電子工学および電気工学

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