An all-solid-state pH sensor employing fluorine-terminated polycrystalline boron-doped diamond as a pH-insensitive solution-gate field-effect transistor

Yukihiro Shintani, Mikinori Kobayashi, Hiroshi Kawarada

    研究成果: Article

    2 引用 (Scopus)

    抄録

    A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

    元の言語English
    記事番号1040
    ジャーナルSensors (Switzerland)
    17
    発行部数5
    DOI
    出版物ステータスPublished - 2017 5 5

    Fingerprint

    Solid-state sensors
    pH sensors
    Gates (transistor)
    Diamond
    Boron
    Fluorine
    fluorine
    Diamonds
    boron
    field effect transistors
    diamonds
    solid state
    sensors
    Field effect transistors
    Platinum
    Oxygen
    Electrodes
    sensitivity
    platinum

    ASJC Scopus subject areas

    • Analytical Chemistry
    • Atomic and Molecular Physics, and Optics
    • Biochemistry
    • Electrical and Electronic Engineering

    これを引用

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    AU - Kobayashi, Mikinori

    AU - Kawarada, Hiroshi

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    KW - PH-insensitivity

    KW - Polycrystalline boron-doped diamond

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