抜粋
A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO2 film is delineated by removing the Mo pattern underneath the SiO2 film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1138-1139 |
| ページ数 | 2 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 25 |
| 発行部数 | 7 |
| DOI |
|
| 出版物ステータス | Published - 1986 7 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
フィンガープリント An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Yamauchi, N. (1986). An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation. Japanese journal of applied physics, 25(7), 1138-1139. https://doi.org/10.1143/JJAP.25.1138