TY - JOUR
T1 - An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation
AU - Yamauchi, Noriyoshi
PY - 1986/7
Y1 - 1986/7
N2 - A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO2 film is delineated by removing the Mo pattern underneath the SiO2 film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.
AB - A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO2 film is delineated by removing the Mo pattern underneath the SiO2 film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.
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U2 - 10.1143/JJAP.25.1138
DO - 10.1143/JJAP.25.1138
M3 - Comment/debate
AN - SCOPUS:84939004419
VL - 25
SP - 1138
EP - 1139
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
ER -