An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation

Noriyoshi Yamauchi

研究成果: Comment/debate

2 引用 (Scopus)

抜粋

A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO2 film is delineated by removing the Mo pattern underneath the SiO2 film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.

元の言語English
ページ(範囲)1138-1139
ページ数2
ジャーナルJapanese journal of applied physics
25
発行部数7
DOI
出版物ステータスPublished - 1986 7
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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