An electron-spectroscopic view of CVD diamond surface conductivity

S. Kono, M. Shiraishi, T. Goto, T. Abukawa, M. Tachiki, H. Kawarada

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Three diamond (001) samples were made by CVD growth on synthetic diamond substrates in a same batch of growth, for which sheet resistance in atmospheric environment was confirmed. A simple two-point probe method has been applied to the samples to measure sheet resistance in UHV of 0.2-50 MΩ/square. Soft X-ray-induced secondary electron spectroscopy has been used to determine the Fermi level position in UHV of the samples for which in-UHV sheet resistance values were known. The Fermi level as measured turned out to be 1.1±0.2 eV above the valence band top and stayed at the same position within ∼0.1 eV with the sheet resistance change of an order of 2. On the basis of these findings, a plausible model of surface conductivity of CVD diamond is suggested.

本文言語English
ページ(範囲)459-465
ページ数7
ジャーナルDiamond and Related Materials
14
3-7
DOI
出版ステータスPublished - 2005 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 物理学および天文学(全般)
  • 材料化学
  • 電子工学および電気工学

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