An Experimental 2-bit/Cell Storage DRAM for Macroce11 or Memory-on-Logic Application

Tohru Furuyama; Takashi Ohsawa; Yohji Watanabe; Kazuyoshi Muraoka; Kenji Natori; Yousei Nagahama; Tohru Kimura; Hiroto Tanaka

doi:10.1109/4.18599

An Experimental 2-bit/Cell Storage DRAM for Macroce11 or Memory-on-Logic Application

Tohru Furuyama, Takashi Ohsawa, Yohji Watanabe, Kazuyoshi Muraoka, Kenji Natori, Yousei Nagahama, Tohru Kimura, Hiroto Tanaka

研究成果: Article › 査読

21 被引用数 (Scopus)

抄録

A novel 2-bit (four-level)/cell storage technique is described. This technique saves the RAM area, in particular the cell array area which is highly defect sensitive provides fairly fast access time. An experimental 1-Mbit DRAM has been fabricated and has successfully demon-strated the feasibility of this technique for embedded memory applications.

本文言語	English
ページ（範囲）	388-393
ページ数	6
ジャーナル	IEEE Journal of Solid-State Circuits
巻	24
号	2
DOI	https://doi.org/10.1109/4.18599
出版ステータス	Published - 1989 4月
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1109/4.18599

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AU - Natori, Kenji

AU - Nagahama, Yousei

AU - Kimura, Tohru

AU - Tanaka, Hiroto

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An Experimental 2-bit/Cell Storage DRAM for Macroce11 or Memory-on-Logic Application

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