An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications

Toshihiko Yoshimasu*, Masanori Akagi, Noriyuki Tanba, Shinji Hara

*この研究の対応する著者

研究成果: Article査読

108 被引用数 (Scopus)

抄録

This paper gives a detailed description of a novel linearization technique using a transistor base-collector junction diode. The novel linearization technique effectively improves the gain compression and phase distortion of the heterojunction bipolar transistor (HBT) with no additional dc consumption, leading to highly efficient linear amplification of the π/4 DQPSK modulation signals. An AIGaAs/daAs HBT monolithic microwave integrated circuit (MMIC) linear power amplifier was fabricated using the novel linearization technique for the handsets used in the 1.9 GHz Japanese Personal Handy Phone System (PHS). The fabricated HBT MMIC power amplifier exhibits an output power of 21 dBm and a power-added efficiency as high as 37% at an operation voltage of 2.7 V. At this rated output power, the adjacent channel power rejection in ±600 kHz offset frequency bands is -55 dBc and the error vector magnitude is 4.3%. This measured linearity is well within the PHS standard.

本文言語English
ページ(範囲)1290-1296
ページ数7
ジャーナルIEEE Journal of Solid-State Circuits
33
9
DOI
出版ステータスPublished - 1998 9 1
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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