An InGaN-based horizontal-cavity surface-emitting laser diode

Tetsuya Akasaka*, Toshio Nishida, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果査読

7 被引用数 (Scopus)

抄録

The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.

本文言語English
ページ(範囲)4104-4106
ページ数3
ジャーナルApplied Physics Letters
84
20
DOI
出版ステータスPublished - 2004 5 17
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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