An integrated miniature capacitive pressure sensor

Takeshi Kudoh, Shuichi Shoji, Masayoshi Esashi

研究成果: Article査読

19 被引用数 (Scopus)

抄録

A newly designed capacitive pressure sensor which incorporates a CMOS IC on the same silicon chip has been developed. The sensor chip is 3.3 mm × 3.7 mm × 0.5 mm in size, and both the sensing capacitive element and the electronic circuit are hermetically sealed between the silicon substrate and the glass cover using a unique electrical feedthrough structure. The incorporated electronic circuit is the C-F converter whose oscillation frequency changes as a function of the sensing capacitance. By optimizing the circuit supply voltage, the thermally induced baseline (oscillation frequency at atmospheric pressure) drift can be reduced to within 3.1% F.S. between 20 °C and 50 °C. Since the oscillation frequency can be counted by the consumed current pulses, the pressure waveform can be monitored with only two external leads.

本文言語English
ページ(範囲)185-193
ページ数9
ジャーナルSensors and Actuators: A. Physical
29
3
DOI
出版ステータスPublished - 1991 12
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 金属および合金
  • 電子工学および電気工学

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