An Integrated Photodetector-Amplifier Using a-Si p-i-n Photodiodes and Poly-Si Thin-Film Transistors

Noriyoshi Yamauchi, Masamichi Okamura

研究成果: Article査読

6 被引用数 (Scopus)

抄録

We propose a photodetector-amplifier circuit consisting of a bridge photodetector circuit and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. A test circuit was fabricated using a-Si p-i-n photodiodes and poly-Si thin-film transistors on a quartz substrate. A clear effect of the differential amplifier was demonstrated in the test circuit. It is shown that the circuit performance can be controlled by changing the bias current of the differential amplifier. With a relatively low bias current of the order of 10-11 A, the circuit works digitally with output voltages either close to 0 V or V pp. The power consumption of the circuit is approximately 60 μW which is low enough for use in two-dimensional arrays.

本文言語English
ページ(範囲)319-321
ページ数3
ジャーナルIEEE Photonics Technology Letters
5
3
DOI
出版ステータスPublished - 1993 3
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 電子工学および電気工学

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