An investigation of tunable spin-orbit interactions in front-gated In0.75Ga0.25As/In0.75Al0.25As heterojunctions

Yuuki Sato*, Shin ichiro Gozu, Tomohiro Kita, Syoji Yamada

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We investigated zero-field spin-splitting in normal-type In0.75Ga0.25As/In0.75Al0.25As heterostructure by magnetoresistance measurements at 1.5K. The maximum value of spin-orbit interaction parameter, αzero, obtained here is 32×10-12eVm. We also confirmed a tuning of αzero by applying gate biases. On the other hand, we observed no beat oscillation when the In0.75Ga0.25As well width decreased from 30 to 10nm. These results suggested that interface contribution related to the asymmetry of wave function penetration into the barriers could be enhanced in our heterojunction.

本文言語English
ページ(範囲)77-80
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
10
1-3
DOI
出版ステータスPublished - 2001 5月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

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