We investigated zero-field spin-splitting in normal-type In0.75Ga0.25As/In0.75Al0.25As heterostructure by magnetoresistance measurements at 1.5K. The maximum value of spin-orbit interaction parameter, αzero, obtained here is 32×10-12eVm. We also confirmed a tuning of αzero by applying gate biases. On the other hand, we observed no beat oscillation when the In0.75Ga0.25As well width decreased from 30 to 10nm. These results suggested that interface contribution related to the asymmetry of wave function penetration into the barriers could be enhanced in our heterojunction.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版物ステータス||Published - 2001 5 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics