抄録
We fabricated an etched grating filter on a Ti-diffused waveguide in LiNbO3 using inductively coupled plasma etching with C 4F8/Ar as an etching gas, which has an etching rate of 85.1 nm/min. The etched grating filter had a reflectivity of 35% and a bandwidth of 0.02 nm. Maximum reflectivity was obtained when the electric field of an incident beam was perpendicular to the grating.
本文言語 | English |
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ページ(範囲) | 347-352 |
ページ数 | 6 |
ジャーナル | ieice electronics express |
巻 | 3 |
号 | 14 |
DOI | |
出版ステータス | Published - 2006 7月 25 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学