An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology

Jia Chen*, Toshihiko Yoshimasu, Wei Liang Hu, Haiwen Liu, Nobuyuki Itoh, Koji Yonemura

*この研究の対応する著者

研究成果: Conference contribution

抄録

We propose a unique wideband amplifier configuration. The new configuration adopts an improved Darlington amplifier to broaden the bandwidth and flatten the output gain. The low power consumption and matched impedances are also achieved in our amplifier. This circuit has been realized using Toshiba 0.35μm SiGe BiCMOS technology with the fT of 30GHz. The simulation result of the presented amplifier demonstrates 1-10GHz bandwidth and 11.3-dB maximum forward gain (S21) with less than ±0.5-dB gain flatness while it drains 8mA from a 3-V supply. A 1-dB compression point and an DP3 of -12.5dBm and 6dBm respectively also have been reported in this paper.

本文言語English
ホスト出版物のタイトル2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings - Circuits and Systems
ページ2614-2617
ページ数4
DOI
出版ステータスPublished - 2006
イベント2006 International Conference on Communications, Circuits and Systems, ICCCAS - Guilin, China
継続期間: 2006 6 252006 6 28

出版物シリーズ

名前2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings
4

Conference

Conference2006 International Conference on Communications, Circuits and Systems, ICCCAS
国/地域China
CityGuilin
Period06/6/2506/6/28

ASJC Scopus subject areas

  • 電子工学および電気工学

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