抜粋
In this paper in situ x-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at ZnSe/GaAs and CdTe/InSb interfaces grown by molecular-beam epitaxy. X-ray photoelectron spectra support the transmission electron microscopy evidence that ZnSe/GaAs MIS capacitors exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc blende Ga<inf>2</inf>Se<inf>3</inf>. An interfacial layer can be deliberately introduced by reacting an As deficient GaAs surface with an incident Se flux. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from separately grown Ga<inf>2</inf>Se<inf>3</inf> epilayers, clearly indicate the same Se bonding characteristic for the Se-reacted layer, and the Ga<inf>2</inf>Se<inf>3</inf> epilayer. A parallel XPS study of CdTe/InSb interfaces leads to the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming a II-VI-on-III-V junction.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 2171-2175 |
| ページ数 | 5 |
| ジャーナル | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| 巻 | 9 |
| 発行部数 | 4 |
| DOI | |
| 出版物ステータス | Published - 1991 7 1 |
| 外部発表 | Yes |
フィンガープリント
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering