Analysis of local lattice strain around oxygen precipitates in Czochralski-grown silicon wafers using convergent beam electron diffraction

Mitsuharu Yonemura, Koji Sueoka, Kazuhito Kamei

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The local lattice strain field around oxygen precipitates in Czochralski-grown silicon (CZ-Si) wafers has been measured quantitatively using convergent beam electron diffraction (CBED). As a result of the strain analysis from higher-order Laue zone patterns in the CBED disk, strain of the silicon lattices was found in the vicinity of oxygen precipitates, i.e., platelet type and polyhedral type. The strain along the normal direction to the precipitate is compressive, and the strain along the parallel direction to the precipitate is tensile. The lattice strain field around the precipitate decreases monotonically as a function of distance from the precipitate/matrix interface. Further, the morphological change in the growth process of the precipitate is important for the formation of the local lattice strain.

本文言語English
ページ(範囲)3440-3447
ページ数8
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
6 A
出版ステータスPublished - 1999 6
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Analysis of local lattice strain around oxygen precipitates in Czochralski-grown silicon wafers using convergent beam electron diffraction」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル