Analysis of the degradation mechanism of Pt/SrBi2(Ta/Nb)2O9/Pt capacitors during reductive annealing

Atsushi Tofuku*, Tomohisa Yoshie, Tetsuya Osaka, Ichiro Koiwa, Hiroyo Kobayashi, Yoshihiro Sawada, Akira Hashimoto

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Degradation mechanism of the Pt/SrBi2Ta2xO9/Pt and Pt/SrBi2(Ta1.x/Nbx)2O9/Pt capacitors exposed to the hydrogen attack has been analyzed. The capacitors were fabricated from thin-films consisting of SrBi2Ta2xO9 (1 ≃ x ≃ 1.1) and SrBi2(Ta1.x/Nbx)2O9 (0 ≃ x ≃ 1) (SBTN) that were formed using a sol-gel process. In most capacitors, SBTN thin-films were short-circuited while annealing in the reducing atmosphere. In contrast, excessive Ta addition could hold back the short circuit. Analysis of the degradation mechanism were carried out by means of the XRD, TEM and XPS, which revealed that the most significant alteration took place in the vicinity of crystal grain boundaries. It was also found that the film with excessive Ta concentration contains the pyrochlore phase in the grain boundary layers. These findings suggest that the stabilization of grain boundary layers is effective to realize capacitors resistant to process conditions.

本文言語English
ページ(範囲)245-264
ページ数20
ジャーナルIntegrated Ferroelectrics
25
1-4
DOI
出版ステータスPublished - 1999

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 制御およびシステム工学
  • セラミックおよび複合材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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