Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement

Takeshi Kobayashi*, Takuya Ariki, Mamoru Iwabuchi, Tetsuro Maki, Shozo Shikama, Sei Suzuki

*この研究の対応する著者

研究成果: Article査読

36 被引用数 (Scopus)

抄録

Beneficial features of boron multiple delta doping (MDD) in synthetic diamond thin films are studied analytically and compared with MDD in GaAs. In spite of a deep boron level (∼0.3 eV), MDD greatly helps the thermal excitation of holes via elevation of the Fermi level toward the acceptor boron level. Thus, a hole excitation 6-7 times higher than that of the uniformly doped one is obtained. Furthermore, more than 90% of holes are in the spacer layer (i-diamond) where the mobility is high, resulting in a film conductance of the MDD structure more than 20 times higher than that of the conventional one when the same amount of boron is uniformly doped.

本文言語English
ページ(範囲)1977-1979
ページ数3
ジャーナルJournal of Applied Physics
76
3
DOI
出版ステータスPublished - 1994 12 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル