Valence-band dispersions in (formula presented) along the (formula presented) line (formula presented) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in (formula presented) These states show no clear dispersions and behave like an impurity band induced by Mn doping.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||Published - 2001|
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