Anisotropic oxygen reactive ion etching for removing residual layers from 45 nm-width imprint patterns

Takuya Uehara, Shoichi Kubo, Nobuya Hiroshiba, Masaru Nakagawa*

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We designed and set up an apparatus of oxygen reactive ion etching (O2 RIE) with parallel electrode configuration to remove a residual layer located on concave parts of ultraviolet nanoimprinted resist patterns and to maintain the pattern linewidth after dry etching. Imprint resist patterns with 45 nm line-and-space on a silicon wafer were fabricated with a bisphenol A-based UV-curable resin (NL-KK1) and a fluorinated replica mold under an easily condensable gas atmosphere. Cross-sectional field-emission scanning electron microscope observations revealed that the etching parameters of O2 mass flow rate, O2 pressure, and radio frequency (RF) bias power changed the resist pattern shapes. Steep resist patterns of the hardly changed linewidth could be left without the residual layer on the silicon substrates by tuning the parameters which caused anisotropic O2 RIE. The imprint resist mask was applied for a subsequent dry etching of underneath silicon without any metal hard mask layers, and 45 nm line-and-space silicon pa tterns could be obtained.

本文言語English
ページ(範囲)201-208
ページ数8
ジャーナルJournal of Photopolymer Science and Technology
29
2
DOI
出版ステータスPublished - 2016 1月 1
外部発表はい

ASJC Scopus subject areas

  • ポリマーおよびプラスチック
  • 有機化学
  • 材料化学

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