Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

M. Kasu, T. Makimoto, N. Kobayashi

研究成果: Article査読

16 被引用数 (Scopus)

抄録

We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN-rich regions are elongated in the [1̄10] direction, suggesting that N passivation proceeds in the [1̄10] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first-layer As atoms on the (2×4) surface.

本文言語English
ページ(範囲)955-957
ページ数3
ジャーナルApplied Physics Letters
68
7
DOI
出版ステータスPublished - 1996 12 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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