Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam

Toshimi Wada, Toshihiko Kanayama, Shingo Ichimura, Yoshinobu Sugiyama, Masanori Komuro

研究成果: Article査読

抄録

Evaluating the low-temperature mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures, we have studied the nature of the damage induced in the heterostructure by low-energy electron-beam irradiation up to 7.5 keV at room temperature and at 90 K. The isochronal annealing revealed that at around 450 K the degraded mobility recovered quickly in the 90-K-irradiated sample and gradually in the sample irradiated at room temperature. However, the quality of both samples did not recover completely upon annealing at 675 K. The electron-beam irradiation was speculated to cause the formation of As-related defects.

本文言語English
ページ(範囲)722-721
ページ数2
ジャーナルJapanese journal of applied physics
33
12S
DOI
出版ステータスPublished - 1994 12
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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