Annealing behavior of spin density in UHV evaporated amorphous silicon

Takao Yonehara, Toshio Saitoh, Hiroshi Kawarada, Tohru Hirata, Masakazu Kakumu, Iwao Ohdomari

    研究成果: Article

    4 引用 (Scopus)

    抄録

    The ESR of amorphous silicon films evaporated in UHV has been measured at room temperature. Up to 900°C the annealing behavior of the spin density in the amorphous silicon films is quite different from that of films deposited in conventional HV.

    元の言語English
    ページ(範囲)192-194
    ページ数3
    ジャーナル"Physics Letters, Section A: General, Atomic and Solid State Physics"
    78
    発行部数2
    DOI
    出版物ステータスPublished - 1980

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    silicon films
    amorphous silicon
    annealing
    room temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    これを引用

    Annealing behavior of spin density in UHV evaporated amorphous silicon. / Yonehara, Takao; Saitoh, Toshio; Kawarada, Hiroshi; Hirata, Tohru; Kakumu, Masakazu; Ohdomari, Iwao.

    :: "Physics Letters, Section A: General, Atomic and Solid State Physics", 巻 78, 番号 2, 1980, p. 192-194.

    研究成果: Article

    Yonehara, Takao ; Saitoh, Toshio ; Kawarada, Hiroshi ; Hirata, Tohru ; Kakumu, Masakazu ; Ohdomari, Iwao. / Annealing behavior of spin density in UHV evaporated amorphous silicon. :: "Physics Letters, Section A: General, Atomic and Solid State Physics". 1980 ; 巻 78, 番号 2. pp. 192-194.
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    abstract = "The ESR of amorphous silicon films evaporated in UHV has been measured at room temperature. Up to 900°C the annealing behavior of the spin density in the amorphous silicon films is quite different from that of films deposited in conventional HV.",
    author = "Takao Yonehara and Toshio Saitoh and Hiroshi Kawarada and Tohru Hirata and Masakazu Kakumu and Iwao Ohdomari",
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    AU - Kakumu, Masakazu

    AU - Ohdomari, Iwao

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