The ESR of amorphous silicon films evaporated in UHV has been measured at room temperature. Up to 900°C the annealing behavior of the spin density in the amorphous silicon films is quite different from that of films deposited in conventional HV.
|ジャーナル||"Physics Letters, Section A: General, Atomic and Solid State Physics"|
|出版ステータス||Published - 1980|
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