Annealing effect of Cd + ion-implanted liquid encapsulated Czochralski-GaAs

Y. Kawasumi*, Y. Makita, S. Kimura, T. Iida, M. Kotani, A. Obara, H. Shibata, Naoto Kobayashi, T. Tsukamoto, E. Kobayashi

*この研究の対応する著者

研究成果: Conference contribution

抄録

Furnace annealing (FA) and rapid thermal annealing (RTA) were made for Cd + ion-implanted GaAs with Cd concentration, [Cd] from 1×10 16 cm -3 to 3×10 21 cm -3. In FA samples, Raman scattering spectra exhibited a single peak at 292 cm -1 for entire [Cd] range which is LO-phonon mode from (100) GaAs. In RTA samples, LO-phonon mode is a single peak for [Cd]<1×10 19 cm -3 but with growing [Cd], TO-phonon mode appears for [Cd]>1×10 20 cm -3 and becomes a dominant signal for [Cd]=3×10 21 cm -3. The quenching of LO-phonon mode with increasing [Cd] was more clearly observed in RTA samples than in FA ones. Hall-effects results, however, showed that activation rate of RTA samples is 6 approx. 7 times larger than that of FA ones for [Cd]>1×10 21 cm -3. 2K photoluminescence spectra revealed that in FA samples multiple shallow emissions associated with Cd are formed while in RTA ones the dominant emission is the band to Cd acceptor transition.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
出版社Materials Research Society
ページ841-846
ページ数6
396
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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