Furnace annealing (FA) and rapid thermal annealing (RTA) were made for Cd + ion-implanted GaAs with Cd concentration, [Cd] from 1×10 16 cm -3 to 3×10 21 cm -3. In FA samples, Raman scattering spectra exhibited a single peak at 292 cm -1 for entire [Cd] range which is LO-phonon mode from (100) GaAs. In RTA samples, LO-phonon mode is a single peak for [Cd]<1×10 19 cm -3 but with growing [Cd], TO-phonon mode appears for [Cd]>1×10 20 cm -3 and becomes a dominant signal for [Cd]=3×10 21 cm -3. The quenching of LO-phonon mode with increasing [Cd] was more clearly observed in RTA samples than in FA ones. Hall-effects results, however, showed that activation rate of RTA samples is 6 approx. 7 times larger than that of FA ones for [Cd]>1×10 21 cm -3. 2K photoluminescence spectra revealed that in FA samples multiple shallow emissions associated with Cd are formed while in RTA ones the dominant emission is the band to Cd acceptor transition.
|ホスト出版物のタイトル||Materials Research Society Symposium - Proceedings|
|出版社||Materials Research Society|
|出版ステータス||Published - 1996|
ASJC Scopus subject areas