Annealing effects on Ta doped SnO2 films

Junjun Jia*, Yu Muto, Nobuto Oka, Yuzo Shigesato

*この研究の対応する著者

研究成果: Conference contribution

抄録

Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

本文言語English
ホスト出版物のタイトルNanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems
ページ245-251
ページ数7
DOI
出版ステータスPublished - 2012
外部発表はい
イベント2012 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2012 4 92012 4 13

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1454
ISSN(印刷版)0272-9172

Other

Other2012 MRS Spring Meeting
国/地域United States
CitySan Francisco, CA
Period12/4/912/4/13

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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