Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions

Jiayang Fei, Ryota Kunugi, Takanobu Watanabe, Koji Kita

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We experimentally investigated the dipole layer formation at Al2O3/AlFxOy (x:y = 1:1 and 1:2.5) interfaces, which would be explicable by considering the anion density difference as the key parameter to determine the dipole direction at the dielectric interface with different anions. Molecular dynamics (MD) simulation of Al2O3/AlF3 demonstrates a preferential migration of O from Al2O3 to AlF3 compared with F to the opposite direction which suggests that anion migration due to the density difference could determine the direction of the dipole layer formed at this interface. In addition, charge separation due to the difference in the anion valences could have certain effect simultaneously.

本文言語English
論文番号162907
ジャーナルApplied Physics Letters
110
16
DOI
出版ステータスPublished - 2017 4 17

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Anomalous flatband voltage shift of AlF<sub>x</sub>O<sub>y</sub>/Al<sub>2</sub>O<sub>3</sub> MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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