Antiferromagnetic heusler Ru 2 MnGe epitaxial thin films showing néel temperatures up to 353 K

N. Fukatani*, H. Fujita, T. Miyawaki, K. Ueda, H. Asano

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Structural and electrical transport properties were investigated for Heusler-type alloy Ru 2 MnGe thin films. Ru 2 MnGe films on MgO substrate were subjected to an in-plane compressive strain due to their small lattice mismatch (-0.7\%, and exhibited enhanced antiferromagnetic transition temperature (T-N up to 353 K, which is much higher than that of the bulk material (T-N= 316 K). In contrast, the films on MgAl 2O 4 were almost in a relaxed-strain state, and showed T N close to the bulk value (304 K). It was also found that the T N of Ru 2MnGe thin films on MgO exhibited oscillating behavior depending on c/a ratio. We argued that the next-nearest neighbor magnetic interactions (J-2 of Mn-Mn atoms has oscillated depending on the degree of strain in Ru 2MnGe, which contribute to the oscillating behavior of T N against c/a.

本文言語English
論文番号6332706
ページ(範囲)3211-3214
ページ数4
ジャーナルIEEE Transactions on Magnetics
48
11
DOI
出版ステータスPublished - 2012
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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