Antiferromagnetic heusler Ru 2 MnGe epitaxial thin films showing néel temperatures up to 353 K

N. Fukatani; H. Fujita; T. Miyawaki; K. Ueda; H. Asano

doi:10.1109/TMAG.2012.2198874

Antiferromagnetic heusler Ru ₂ MnGe epitaxial thin films showing néel temperatures up to 353 K

N. Fukatani^*, H. Fujita, T. Miyawaki, K. Ueda, H. Asano

^*この研究の対応する著者

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

Structural and electrical transport properties were investigated for Heusler-type alloy Ru ₂ MnGe thin films. Ru ₂ MnGe films on MgO substrate were subjected to an in-plane compressive strain due to their small lattice mismatch (-0.7\%, and exhibited enhanced antiferromagnetic transition temperature (T-N up to 353 K, which is much higher than that of the bulk material (T-N= 316 K). In contrast, the films on MgAl ₂O ₄ were almost in a relaxed-strain state, and showed T _N close to the bulk value (304 K). It was also found that the T _N of Ru ₂MnGe thin films on MgO exhibited oscillating behavior depending on c/a ratio. We argued that the next-nearest neighbor magnetic interactions (J-2 of Mn-Mn atoms has oscillated depending on the degree of strain in Ru ₂MnGe, which contribute to the oscillating behavior of T _N against c/a.

本文言語	English
論文番号	6332706
ページ（範囲）	3211-3214
ページ数	4
ジャーナル	IEEE Transactions on Magnetics
巻	48
号	11
DOI	https://doi.org/10.1109/TMAG.2012.2198874
出版ステータス	Published - 2012
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/TMAG.2012.2198874

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引用スタイル

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title = "Antiferromagnetic heusler Ru 2 MnGe epitaxial thin films showing n{\'e}el temperatures up to 353 K",

abstract = "Structural and electrical transport properties were investigated for Heusler-type alloy Ru 2 MnGe thin films. Ru 2 MnGe films on MgO substrate were subjected to an in-plane compressive strain due to their small lattice mismatch (-0.7\%, and exhibited enhanced antiferromagnetic transition temperature (T-N up to 353 K, which is much higher than that of the bulk material (T-N= 316 K). In contrast, the films on MgAl 2O 4 were almost in a relaxed-strain state, and showed T N close to the bulk value (304 K). It was also found that the T N of Ru 2MnGe thin films on MgO exhibited oscillating behavior depending on c/a ratio. We argued that the next-nearest neighbor magnetic interactions (J-2 of Mn-Mn atoms has oscillated depending on the degree of strain in Ru 2MnGe, which contribute to the oscillating behavior of T N against c/a.",

keywords = "Antiferromagnetic materials, N{\'e}el temperature, Ru MnGe, strain effect",

author = "N. Fukatani and H. Fujita and T. Miyawaki and K. Ueda and H. Asano",

note = "Funding Information: This work was partly supported by the Grants-in-Aid for Scientific Research (20360005 and 23656214) from the Ministry of Education, Culture, Sports, Science, and Technology, and by a Grant-in-Aid from the Japan Society for the Promotion of Science Fellows.",

year = "2012",

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T1 - Antiferromagnetic heusler Ru 2 MnGe epitaxial thin films showing néel temperatures up to 353 K

AU - Fukatani, N.

AU - Fujita, H.

AU - Miyawaki, T.

AU - Ueda, K.

AU - Asano, H.

N1 - Funding Information: This work was partly supported by the Grants-in-Aid for Scientific Research (20360005 and 23656214) from the Ministry of Education, Culture, Sports, Science, and Technology, and by a Grant-in-Aid from the Japan Society for the Promotion of Science Fellows.

PY - 2012

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N2 - Structural and electrical transport properties were investigated for Heusler-type alloy Ru 2 MnGe thin films. Ru 2 MnGe films on MgO substrate were subjected to an in-plane compressive strain due to their small lattice mismatch (-0.7\%, and exhibited enhanced antiferromagnetic transition temperature (T-N up to 353 K, which is much higher than that of the bulk material (T-N= 316 K). In contrast, the films on MgAl 2O 4 were almost in a relaxed-strain state, and showed T N close to the bulk value (304 K). It was also found that the T N of Ru 2MnGe thin films on MgO exhibited oscillating behavior depending on c/a ratio. We argued that the next-nearest neighbor magnetic interactions (J-2 of Mn-Mn atoms has oscillated depending on the degree of strain in Ru 2MnGe, which contribute to the oscillating behavior of T N against c/a.

AB - Structural and electrical transport properties were investigated for Heusler-type alloy Ru 2 MnGe thin films. Ru 2 MnGe films on MgO substrate were subjected to an in-plane compressive strain due to their small lattice mismatch (-0.7\%, and exhibited enhanced antiferromagnetic transition temperature (T-N up to 353 K, which is much higher than that of the bulk material (T-N= 316 K). In contrast, the films on MgAl 2O 4 were almost in a relaxed-strain state, and showed T N close to the bulk value (304 K). It was also found that the T N of Ru 2MnGe thin films on MgO exhibited oscillating behavior depending on c/a ratio. We argued that the next-nearest neighbor magnetic interactions (J-2 of Mn-Mn atoms has oscillated depending on the degree of strain in Ru 2MnGe, which contribute to the oscillating behavior of T N against c/a.

KW - Antiferromagnetic materials

KW - Néel temperature

KW - Ru MnGe

KW - strain effect

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