Application of 100% ozone gas process to rapid low-temperature oxidation

H. Nonaka, Shingo Ichimura, T. Nishiguchi, Y. Morikawa, M. Kekura, M. Miyamoto

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO2 films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO2 film within 4 minutes at 400°C. A very low excitation energy observed for the SiO2 film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO2 films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×1010 cm-2eV-1) and high breakdown voltage (>13 MVcm-1).

元の言語English
ホスト出版物のタイトル10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
出版者Institute of Electrical and Electronics Engineers Inc.
ページ119-123
ページ数5
ISBN(電子版)0780374657, 9780780374652
DOI
出版物ステータスPublished - 2002 1 1
外部発表Yes
イベント10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 - Vancouver, Canada
継続期間: 2002 9 252002 9 27

Other

Other10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
Canada
Vancouver
期間02/9/2502/9/27

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

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