Application of a nuclear microprobe to analysis of SiC semiconductor

H. Sekiguchi*, T. Nishijima, I. Nashiyama, Naoto Kobayashi, T. Misawa, S. Yoshida

*この研究の対応する著者

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Three-dimensional microstructures of a crystal with epitaxially grown silicon-carbide (3C-SiC) layers were analyzed with a scanning nuclear microprobe combined with a RBS channeling technique. SiC layers were epitaxially grown on a Si crystal substrate by the chemical vapor deposition (CVD) method. By using a 1.6 MeV proton microbeam of 4 μm diameter and focusing angle 0.2°, channeling contrast maps along the 〈100〉 crystal axis were obtained. Several anomalously grown nonchanneling regions with a mean diameter of 30 μm were observed in a high-quality crystalline field. These regions were found to have columnar structures from a depth profile analysis. The RBS spectrum showed that stoichiometry of these regions was the same as that in the remaining normal crystal. Elemental maps and depth profiles at the ohmic electrode and the field oxide of the SiC MOS diode were observed by PIXE, RBS and NRA methods using proton, He+ and deuteron microbeams, respectively.

本文言語English
ページ(範囲)225-230
ページ数6
ジャーナルNuclear Inst. and Methods in Physics Research, B
54
1-3
DOI
出版ステータスPublished - 1991 3 2
外部発表はい

ASJC Scopus subject areas

  • 表面、皮膜および薄膜
  • 器械工学
  • 表面および界面

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