Application of InAs quantum dots for high-speed photodiodes in fiber optics

T. Umezawa, K. Akahane, A. Kanno, T. Kawanishi

研究成果: Paper査読

抄録

We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

本文言語English
DOI
出版ステータスPublished - 2013 1 1
外部発表はい
イベント2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany
継続期間: 2013 5 122013 5 16

Other

Other2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
国/地域Germany
CityMunich
Period13/5/1213/5/16

ASJC Scopus subject areas

  • 電子工学および電気工学

フィンガープリント

「Application of InAs quantum dots for high-speed photodiodes in fiber optics」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル