TY - JOUR
T1 - Application of organic monolayers formed on Si(1 1 1)
T2 - Possibilities for nanometer-scale patterning
AU - Yamada, Taro
AU - Takano, Nao
AU - Yamada, Keiko
AU - Yoshitomi, Shuhei
AU - Inoue, Tomoyuki
AU - Osaka, Tetsuya
N1 - Funding Information:
This work was supported by the Research for the Future Project “Wafer-Scale Formation Process of Nano Dots”, the Japan Society for the Promotion of Science, Iketani Science and Technology Foundation, the Murata Science Foundation and Yazaki Memorial Foundation for Science and Technology. The authors are thankful to the generous donation by Matsushita Research Institute, Tokyo, Inc.
PY - 2001
Y1 - 2001
N2 - The modification of hydrogen-terminated Si(1 1 1) wafer surfaces was reproduced by previously reported methods of the electrolysis of para-substituted benzendiazonium salts and the Grignard reaction with various alkyl moieties. The electrolysis methods formed partially ordered two-dimensional monolayers, which were however obscured by precipitation of by-products. The Grignard reaction deposited a monolayer of moieties of alkyl groups randomly arranged, which are more suitable for surface passivation. Aiming for the application to nanometer-scale monolayer patterning of the Si(1 1 1) wafer surface, the organic-monolayer-covered Si(l 1 1) surfaces were subjected to electron beam bombardment. After electron bombardment with ambient O2 or H2O introduced, adsorption of oxygen was observed within the beam spot. By immersing the bombarded specimen into an aqueous NiSO4 + (NH4)2SO4 solution, the oxygen-deposited portions selectively included Ni atoms. This will be useful in constructing nanometer-scale metallic structures over Si wafer surfaces.
AB - The modification of hydrogen-terminated Si(1 1 1) wafer surfaces was reproduced by previously reported methods of the electrolysis of para-substituted benzendiazonium salts and the Grignard reaction with various alkyl moieties. The electrolysis methods formed partially ordered two-dimensional monolayers, which were however obscured by precipitation of by-products. The Grignard reaction deposited a monolayer of moieties of alkyl groups randomly arranged, which are more suitable for surface passivation. Aiming for the application to nanometer-scale monolayer patterning of the Si(1 1 1) wafer surface, the organic-monolayer-covered Si(l 1 1) surfaces were subjected to electron beam bombardment. After electron bombardment with ambient O2 or H2O introduced, adsorption of oxygen was observed within the beam spot. By immersing the bombarded specimen into an aqueous NiSO4 + (NH4)2SO4 solution, the oxygen-deposited portions selectively included Ni atoms. This will be useful in constructing nanometer-scale metallic structures over Si wafer surfaces.
KW - Diazonium electrolysis
KW - Electron bombardment
KW - Grignard reagent
KW - Metal impregnation
KW - Nanometer-scale fabrication
KW - Organic monolayer
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U2 - 10.1016/S1388-2481(00)00150-8
DO - 10.1016/S1388-2481(00)00150-8
M3 - Article
AN - SCOPUS:0035135459
SN - 1388-2481
VL - 3
SP - 67
EP - 72
JO - Electrochemistry Communications
JF - Electrochemistry Communications
IS - 2
ER -