抄録
Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiC2/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. Theformed oxidized titanium line has resistivity of 2 x 104ohm cm, which is a value seven orders of magnitude higherthan that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found tobe δEg — 0.2h eV.
本文言語 | English |
---|---|
ページ(範囲) | 1387-1390 |
ページ数 | 4 |
ジャーナル | Japanese journal of applied physics |
巻 | 34 |
号 | 2S |
DOI | |
出版ステータス | Published - 1995 2月 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)