Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources

A. Kawaharazuka*, I. Yoshiba, Y. Horikoshi

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We demonstrate area-selective epitaxy by migration-enhanced epitaxy with As2 and As4 as arsenic sources. The distinct whisker structure growing in [1 1 1]B direction is obtained when employing As2 as an arsenic source, while (1 1 1)B facet is formed with As4. The difference in the facet formation can be explained by the formation of As-trimer, which significantly reduces the growth rate of the (1 1 1)B surface. With As2, area-selective epitaxy can be achieved at lower arsenic pressure condition, where less As-trimers are formed. Therefore, growth in the [1 1 1]B direction is enhanced.

本文言語English
ページ(範囲)737-739
ページ数3
ジャーナルApplied Surface Science
255
3
DOI
出版ステータスPublished - 2008 11 30

ASJC Scopus subject areas

  • 表面、皮膜および薄膜

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