Area-selective formation of macropore array by anisotropic electrochemical etching on an n-Si(100) surface in aqueous HF solution

Takayuki Homma*, Hirotaka Sato, Kentaro Mori, Tetsuya Osaka, Shuichi Shoji

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

A photoassisted anodization process to fabricate arrays of uniform and straight macropores at selected areas of a Si wafer surface was developed. The front- and backside surfaces of n-type Si(100) wafers were coated with a thin Si3N2 layer, and the frontside layer was micro-patterned using photolithography and reactive ion etching to form an array of microscopic openings at selected areas. The inverted pyramid-shape micropits were formed at these openings by anisotropic etching using aqueous KOH solution; these pits act as the initiation sites for the anodization to form macropores. The electrochemical etching was carried out in aqueous HF solution under illumination from the backside of the wafer, on which Au/Cr electric contact was formed following removal of the Si3N4 layer. To improve the uniformity of the formation condition of the macropores at the selected area, holes were area-selectively generated by controlling the illumination condition during the anodization. For this, micropatterns were formed on the Au/Cr layer at the backside surface, which were aligned to those at the frontside surface. The parameters, such as HF concentration, current density, and wafer thickness, i.e., hole diffusion length, were optimized, and the arrays of uniform and high-aspect-ratio macropores were formed at the selected area of the domain at the silicon surface.

本文言語English
ページ(範囲)5724-5727
ページ数4
ジャーナルJournal of Physical Chemistry B
109
12
DOI
出版ステータスPublished - 2005 3 31

ASJC Scopus subject areas

  • 物理化学および理論化学
  • 表面、皮膜および薄膜
  • 材料化学

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