Area selective formation of magnetic nanodot arrays on Si wafer by electroless deposition

J. Kawaji, F. Kitaizumi, H. Oikawa, D. Niwa, Takayuki Homma, Tetsuya Osaka

研究成果: Article

9 引用 (Scopus)

抄録

Electroless deposition process for fabricating magnetic dot arrays was studied. A patterned Si substrate with a SiO2 resist was produced by processes combined with electron-beam lithography and reactive ion etching. By immersing the patterned Si substrate into a CoNiP electroless deposition bath, CoNiP was deposited only into the patterned pores, demonstrating a satisfactory area selectivity of the deposition. Excellent uniformity on the CoNiP deposition into the patterned pores with diameter less than 100 nm and high aspect ratio (> 5) was achieved by applying chemical activation processes using a Pd solution prior to the deposition. The CoNiP dot arrays exhibited higher perpendicular squareness ratio than that of CoNiP continuous film and showed a clear magnetization state at DC-magnetized state, which originated from the shape anisotropy caused by high aspect ratio of the dot patterns.

元の言語English
ページ(範囲)245-249
ページ数5
ジャーナルJournal of Magnetism and Magnetic Materials
287
発行部数SPEC. ISS.
DOI
出版物ステータスPublished - 2005 2

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electroless deposition
Electroless plating
wafers
high aspect ratio
Aspect ratio
porosity
Electron beam lithography
Reactive ion etching
Substrates
baths
Magnetization
Anisotropy
lithography
selectivity
direct current
Chemical activation
etching
activation
electron beams
magnetization

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Area selective formation of magnetic nanodot arrays on Si wafer by electroless deposition. / Kawaji, J.; Kitaizumi, F.; Oikawa, H.; Niwa, D.; Homma, Takayuki; Osaka, Tetsuya.

:: Journal of Magnetism and Magnetic Materials, 巻 287, 番号 SPEC. ISS., 02.2005, p. 245-249.

研究成果: Article

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AU - Kawaji, J.

AU - Kitaizumi, F.

AU - Oikawa, H.

AU - Niwa, D.

AU - Homma, Takayuki

AU - Osaka, Tetsuya

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AB - Electroless deposition process for fabricating magnetic dot arrays was studied. A patterned Si substrate with a SiO2 resist was produced by processes combined with electron-beam lithography and reactive ion etching. By immersing the patterned Si substrate into a CoNiP electroless deposition bath, CoNiP was deposited only into the patterned pores, demonstrating a satisfactory area selectivity of the deposition. Excellent uniformity on the CoNiP deposition into the patterned pores with diameter less than 100 nm and high aspect ratio (> 5) was achieved by applying chemical activation processes using a Pd solution prior to the deposition. The CoNiP dot arrays exhibited higher perpendicular squareness ratio than that of CoNiP continuous film and showed a clear magnetization state at DC-magnetized state, which originated from the shape anisotropy caused by high aspect ratio of the dot patterns.

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KW - CoNiP alloys

KW - Electroless deposition

KW - Patterned media

KW - Pd activation process

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