Area selective formation of magnetic nanodot arrays on Si wafer by electroless deposition

J. Kawaji, F. Kitaizumi, H. Oikawa, D. Niwa, T. Homma, T. Osaka

研究成果: Article

9 被引用数 (Scopus)

抄録

Electroless deposition process for fabricating magnetic dot arrays was studied. A patterned Si substrate with a SiO2 resist was produced by processes combined with electron-beam lithography and reactive ion etching. By immersing the patterned Si substrate into a CoNiP electroless deposition bath, CoNiP was deposited only into the patterned pores, demonstrating a satisfactory area selectivity of the deposition. Excellent uniformity on the CoNiP deposition into the patterned pores with diameter less than 100 nm and high aspect ratio (> 5) was achieved by applying chemical activation processes using a Pd solution prior to the deposition. The CoNiP dot arrays exhibited higher perpendicular squareness ratio than that of CoNiP continuous film and showed a clear magnetization state at DC-magnetized state, which originated from the shape anisotropy caused by high aspect ratio of the dot patterns.

本文言語English
ページ(範囲)245-249
ページ数5
ジャーナルJournal of Magnetism and Magnetic Materials
287
SPEC. ISS.
DOI
出版ステータスPublished - 2005 2 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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