Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura, Godai Koike, Akira Komatsubara, Tokuyuki Teraji, Shinobu Onoda, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, E. Wu, Liu Yan, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii

研究成果査読

56 被引用数 (Scopus)

抄録

Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

本文言語English
ページ(範囲)115201
ページ数1
ジャーナルApplied Physics Express
7
11
DOI
出版ステータスPublished - 2014 11 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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