Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures

Y. Tu, B. Han, Y. Shimizu, K. Inoue, Y. Fukui, M. Yano, T. Tanii, T. Shinada, Y. Nagai

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.

本文言語English
論文番号385301
ジャーナルNanotechnology
28
38
DOI
出版ステータスPublished - 2017 8 31

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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