Atomic force microscopy observation of layer-by-layer growth of ultrathin silicon dioxide by ozone gas at room temperature

T. Maeda*, A. Kurokawa, K. Sakamoto, A. Ando, H. Itoh, S. Ichimura

*この研究の対応する著者

研究成果: Article査読

16 被引用数 (Scopus)

抄録

The ozone oxidized surface was assessed via AFM observation. It was found that the step-terrace structure of the clean flat Si (001) is replicated on the surface of the ozone oxides. Conformal oxide layers from 1 monolayer to 1 nm thick with atomic steps and terraces were successfully fabricated. The AFM images of the ozone oxide surface preserved the step and terrace structures.

本文言語English
ページ(範囲)589-592
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
19
2
DOI
出版ステータスPublished - 2001 3月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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