Atomic layer control for suppressing extrinsic defects in ultrathin SiON gate insulator of advanced complementary metal-oxide-semiconductor field-effect transistors

Physics & Astronomy

• oxynitrides 100%
• CMOS 75%
• field effect transistors 65%
• insulators 61%
• defects 46%
• silicon 45%
• optical thickness 35%
• thresholds 20%
• random access memory 19%
• cells 18%
• optimization 11%
• annealing 10%
• electric potential 9%
• performance 7%

Engineering & Materials Science

• MOSFET devices 98%
• Silicon 66%
• Defects 57%
• Optical correlation 33%
• Nitridation 32%
• Defect density 30%
• Annealing 20%
• Data storage equipment 12%
• Electric potential 10%