抄録
Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.
本文言語 | English |
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ページ(範囲) | 809-813 |
ページ数 | 5 |
ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
巻 | 30 |
号 | 4 |
出版ステータス | Published - 1991 4月 |
ASJC Scopus subject areas
- 物理学および天文学(その他)