Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation

Kouji Miura; Kazuhiko Sugiura; Ryutaro Souda; Takashi Aizawa; Chuhei Oshima; Yoshio Ishizawa

Atomic structure of CaF₂/Si(111) interface and defect formation on CaF₂(111) surface by electron irradiation

Kouji Miura^*, Kazuhiko Sugiura, Ryutaro Souda, Takashi Aizawa, Chuhei Oshima, Yoshio Ishizawa

^*この研究の対応する著者

研究成果: Article › 査読

7 被引用数 (Scopus)

抄録

Atomic and electronic structures of the CaF₂/Si(111) interface and the desorption mechanism of F from epitaxial CaF₂(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF₂(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

本文言語	English
ページ（範囲）	809-813
ページ数	5
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	30
号	4
出版ステータス	Published - 1991 4月

ASJC Scopus subject areas

物理学および天文学（その他）

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引用スタイル

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title = "Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation",

abstract = "Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.",

author = "Kouji Miura and Kazuhiko Sugiura and Ryutaro Souda and Takashi Aizawa and Chuhei Oshima and Yoshio Ishizawa",

year = "1991",

month = apr,

language = "English",

volume = "30",

pages = "809--813",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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T1 - Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation

AU - Miura, Kouji

AU - Sugiura, Kazuhiko

AU - Souda, Ryutaro

AU - Aizawa, Takashi

AU - Oshima, Chuhei

AU - Ishizawa, Yoshio

PY - 1991/4

Y1 - 1991/4

N2 - Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

AB - Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

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M3 - Article

AN - SCOPUS:0026139999

VL - 30

SP - 809

EP - 813

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4

ER -

Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation

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ASJC Scopus subject areas

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引用スタイル

Atomic structure of CaF₂/Si(111) interface and defect formation on CaF₂(111) surface by electron irradiation