Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 1991 4月|
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