Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation

Kouji Miura*, Kazuhiko Sugiura, Ryutaro Souda, Takashi Aizawa, Chuhei Oshima, Yoshio Ishizawa

*この研究の対応する著者

    研究成果査読

    7 被引用数 (Scopus)

    抄録

    Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

    本文言語English
    ページ(範囲)809-813
    ページ数5
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    30
    4
    出版ステータスPublished - 1991 4

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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