Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation

Kouji Miura; Kazuhiko Sugiura; Ryutaro Souda; Takashi Aizawa; Chuhei Oshima; Yoshio Ishizawa

Atomic structure of CaF₂/Si(111) interface and defect formation on CaF₂(111) surface by electron irradiation

Kouji Miura^*, Kazuhiko Sugiura, Ryutaro Souda, Takashi Aizawa, Chuhei Oshima, Yoshio Ishizawa

^*この研究の対応する著者

研究成果 › 査読

7 被引用数 (Scopus)

抄録

Atomic and electronic structures of the CaF₂/Si(111) interface and the desorption mechanism of F from epitaxial CaF₂(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF₂(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

本文言語	English
ページ（範囲）	809-813
ページ数	5
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	30
号	4
出版ステータス	Published - 1991 4

ASJC Scopus subject areas

物理学および天文学（その他）

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「Atomic structure of CaF<sub>2</sub>/Si(111) interface and defect formation on CaF<sub>2</sub>(111) surface by electron irradiation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Atomic structure of CaF₂/Si(111) interface and defect formation on CaF₂(111) surface by electron irradiation. / Miura, Kouji; Sugiura, Kazuhiko; Souda, Ryutaro; Aizawa, Takashi; Oshima, Chuhei; Ishizawa, Yoshio.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 30, No. 4, 04.1991, p. 809-813.

研究成果 › 査読

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AU - Oshima, Chuhei

AU - Ishizawa, Yoshio

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