Atomic Structure of Heteroepitaxial Interface between II-VI and III-V Semiconductor

N. Otsuka, D. Li, J. Qiu, M. Kobayashi, R. L. Gunshor

研究成果: Article

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A series of pseudomorphic (100) ZnSe/GaAs heterostructures were grown by molecular beam epitaxy on GaAs epilayers which had different As coverages of surfaces. A large variation of the interface state density was observed among the heterostructures by capacitance-voltage measurements. Transmission electron microscope observations of cross-sectional samples have revealed existence of an interface layer in the heterostructures grown on As-deficient GaAs surfaces. Analyses of dark field images and high resolution microscope images have shown that the interface layer has a structure similar to that of Ga2Se3 which crystallizes in a zincblende type structure with vacancies on the Ga sublattice.

元の言語English
ページ(範囲)622-627
ページ数6
ジャーナルMaterials Transactions, JIM
31
発行部数7
DOI
出版物ステータスPublished - 1990 1 1

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ASJC Scopus subject areas

  • Engineering(all)

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