Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN

Hajime Nagano, Zhixin Qin, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi

研究成果: Article

11 引用 (Scopus)

抄録

Substrate surface treatment techniques and growth conditions are the key of growing high-quality cubic GaN (c-GaN) epitaxial layers on (0 0 1) GaAs substrates. An atomically flat (0 0 1) GaAs substrate surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. The typical surface of the substrate treated by the atomic-H consists of narrow terraces of one monolayer step height with acute-angle polygonal structures. The X-ray rocking curve FWHM of GaN (0 0 2) grown on the atomic-H treated substrate is less than 90 arcsec. It is shown that high-density monolayer steps and kinks at the surface terrace edge would be preferable for the uniform nucleation of the c-GaN buffer layer.

元の言語English
ページ(範囲)265-269
ページ数5
ジャーナルJournal of Crystal Growth
189-190
出版物ステータスPublished - 1998 6 15
外部発表Yes

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Epitaxial growth
Hydrogen
Substrates
hydrogen
Monolayers
Epitaxial layers
Buffer layers
Full width at half maximum
surface treatment
Surface treatment
Nucleation
buffers
gallium arsenide
Irradiation
nucleation
X rays
irradiation
curves
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

これを引用

Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN. / Nagano, Hajime; Qin, Zhixin; Jia, Anwei; Kato, Yoshinori; Kobayashi, Masakazu; Yoshikawa, Akihiko; Takahashi, Kiyoshi.

:: Journal of Crystal Growth, 巻 189-190, 15.06.1998, p. 265-269.

研究成果: Article

Nagano, Hajime ; Qin, Zhixin ; Jia, Anwei ; Kato, Yoshinori ; Kobayashi, Masakazu ; Yoshikawa, Akihiko ; Takahashi, Kiyoshi. / Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN. :: Journal of Crystal Growth. 1998 ; 巻 189-190. pp. 265-269.
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AU - Nagano, Hajime

AU - Qin, Zhixin

AU - Jia, Anwei

AU - Kato, Yoshinori

AU - Kobayashi, Masakazu

AU - Yoshikawa, Akihiko

AU - Takahashi, Kiyoshi

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AB - Substrate surface treatment techniques and growth conditions are the key of growing high-quality cubic GaN (c-GaN) epitaxial layers on (0 0 1) GaAs substrates. An atomically flat (0 0 1) GaAs substrate surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. The typical surface of the substrate treated by the atomic-H consists of narrow terraces of one monolayer step height with acute-angle polygonal structures. The X-ray rocking curve FWHM of GaN (0 0 2) grown on the atomic-H treated substrate is less than 90 arcsec. It is shown that high-density monolayer steps and kinks at the surface terrace edge would be preferable for the uniform nucleation of the c-GaN buffer layer.

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