Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation

Kengou Yamaguchi, Zhixin Qin, Hajime Nagano, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi

研究成果: Article査読

17 被引用数 (Scopus)

抄録

An atomically flat GaAs(001) surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. This method includes low-temperature cleaning and high-temperature smoothening of the GaAs subtle surface. The reflection high energy electron diffraction (RHEED) and AFM study showed that a wide terrace with a 1 monolayer step height was observed when a GaAs(001) surface was cleaned at 400°C and smoothened at 540°C with atomic-H irradiation. The irradiation of atomic-H during the high temperature process maintained a certain surface stoichiometry, and resulted in an atomically flat substrate surface. This technique is useful for heterovalent epitaxy systems involving a single chamber growth system.

本文言語English
ページ(範囲)L1367-L1369
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
36
10 SUPPL. B
出版ステータスPublished - 1997 10 15
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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