Autonomous refresh of floating body cell (FBC)

Takashi Ohsawa*, Ryo Fukuda, Tomoki Higashi, Katsuyuki Fujita, Fumiyoshi Matsuoka, Tomoaki Shino, Hironobu Furuhashi, Yoshihiro Minami, Hiroomi Nakajima, Takeshi Hamamoto, Yohji Watanabe, Akihiro Nitayama, Tohru Furuyama

*この研究の対応する著者

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.

本文言語English
ホスト出版物のタイトル2008 IEEE International Electron Devices Meeting, IEDM 2008
DOI
出版ステータスPublished - 2008
外部発表はい
イベント2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
継続期間: 2008 12月 152008 12月 17

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
国/地域United States
CitySan Francisco, CA
Period08/12/1508/12/17

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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