Awaking of ferromagnetism in GaMnN through control of Mn valence

S. Sonoda*, I. Tanaka, F. Oba, H. Ikeno, H. Hayashi, T. Yamamoto, Y. Yuba, Y. Akasaka, K. Yoshida, M. Aoki, M. Asari, T. Araki, Y. Nanishi, K. Kindo, H. Hori

*この研究の対応する著者

研究成果: Article査読

14 被引用数 (Scopus)

抄録

Room temperature ferromagnetism of GaMnN thin film is awaked by a mild hydrogenation treatment of a sample synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn- L2,3 near edge x-ray absorption fine structure technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from 3+ to 2+ by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the midgap Mn band mediate the magnetic coupling.

本文言語English
論文番号012504
ジャーナルApplied Physics Letters
90
1
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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