Awaking of ferromagnetism in GaMnN through control of Mn valence

S. Sonoda, I. Tanaka, F. Oba, H. Ikeno, H. Hayashi, Tomoyuki Yamamoto, Y. Yuba, Y. Akasaka, K. Yoshida, M. Aoki, M. Asari, T. Araki, Y. Nanishi, K. Kindo, H. Hori

    研究成果: Article

    13 引用 (Scopus)

    抄録

    Room temperature ferromagnetism of GaMnN thin film is awaked by a mild hydrogenation treatment of a sample synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn- L2,3 near edge x-ray absorption fine structure technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from 3+ to 2+ by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the midgap Mn band mediate the magnetic coupling.

    元の言語English
    記事番号012504
    ジャーナルApplied Physics Letters
    90
    発行部数1
    DOI
    出版物ステータスPublished - 2007

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    ferromagnetism
    hydrogenation
    valence
    x ray absorption
    molecular beam epitaxy
    fine structure
    room temperature
    thin films
    atoms
    ions

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    これを引用

    Sonoda, S., Tanaka, I., Oba, F., Ikeno, H., Hayashi, H., Yamamoto, T., ... Hori, H. (2007). Awaking of ferromagnetism in GaMnN through control of Mn valence. Applied Physics Letters, 90(1), [012504]. https://doi.org/10.1063/1.2408646

    Awaking of ferromagnetism in GaMnN through control of Mn valence. / Sonoda, S.; Tanaka, I.; Oba, F.; Ikeno, H.; Hayashi, H.; Yamamoto, Tomoyuki; Yuba, Y.; Akasaka, Y.; Yoshida, K.; Aoki, M.; Asari, M.; Araki, T.; Nanishi, Y.; Kindo, K.; Hori, H.

    :: Applied Physics Letters, 巻 90, 番号 1, 012504, 2007.

    研究成果: Article

    Sonoda, S, Tanaka, I, Oba, F, Ikeno, H, Hayashi, H, Yamamoto, T, Yuba, Y, Akasaka, Y, Yoshida, K, Aoki, M, Asari, M, Araki, T, Nanishi, Y, Kindo, K & Hori, H 2007, 'Awaking of ferromagnetism in GaMnN through control of Mn valence', Applied Physics Letters, 巻. 90, 番号 1, 012504. https://doi.org/10.1063/1.2408646
    Sonoda, S. ; Tanaka, I. ; Oba, F. ; Ikeno, H. ; Hayashi, H. ; Yamamoto, Tomoyuki ; Yuba, Y. ; Akasaka, Y. ; Yoshida, K. ; Aoki, M. ; Asari, M. ; Araki, T. ; Nanishi, Y. ; Kindo, K. ; Hori, H. / Awaking of ferromagnetism in GaMnN through control of Mn valence. :: Applied Physics Letters. 2007 ; 巻 90, 番号 1.
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    T1 - Awaking of ferromagnetism in GaMnN through control of Mn valence

    AU - Sonoda, S.

    AU - Tanaka, I.

    AU - Oba, F.

    AU - Ikeno, H.

    AU - Hayashi, H.

    AU - Yamamoto, Tomoyuki

    AU - Yuba, Y.

    AU - Akasaka, Y.

    AU - Yoshida, K.

    AU - Aoki, M.

    AU - Asari, M.

    AU - Araki, T.

    AU - Nanishi, Y.

    AU - Kindo, K.

    AU - Hori, H.

    PY - 2007

    Y1 - 2007

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    AB - Room temperature ferromagnetism of GaMnN thin film is awaked by a mild hydrogenation treatment of a sample synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn- L2,3 near edge x-ray absorption fine structure technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from 3+ to 2+ by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the midgap Mn band mediate the magnetic coupling.

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