Awaking of ferromagnetism in GaMnN through control of Mn valence

S. Sonoda, I. Tanaka, F. Oba, H. Ikeno, H. Hayashi, T. Yamamoto, Y. Yuba, Y. Akasaka, K. Yoshida, M. Aoki, M. Asari, T. Araki, Y. Nanishi, K. Kindo, H. Hori

研究成果: Article

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抜粋

Room temperature ferromagnetism of GaMnN thin film is awaked by a mild hydrogenation treatment of a sample synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn- L2,3 near edge x-ray absorption fine structure technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from 3+ to 2+ by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the midgap Mn band mediate the magnetic coupling.

元の言語English
記事番号012504
ジャーナルApplied Physics Letters
90
発行部数1
DOI
出版物ステータスPublished - 2007 1 15

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Sonoda, S., Tanaka, I., Oba, F., Ikeno, H., Hayashi, H., Yamamoto, T., Yuba, Y., Akasaka, Y., Yoshida, K., Aoki, M., Asari, M., Araki, T., Nanishi, Y., Kindo, K., & Hori, H. (2007). Awaking of ferromagnetism in GaMnN through control of Mn valence. Applied Physics Letters, 90(1), [012504]. https://doi.org/10.1063/1.2408646