Backside layout design of Snapback-free RCIGBT with multiple-cell

Zhongke Chang, Xiaofei Zhu, Masahide Inuishi

研究成果: Conference article

抄録

—A backside layout design for multiple cell RCIGBT is proposed to suppress the snapback effect which happens in the turn-on process of RCIGBT in this paper. The internal operation mechanism of RCIGBT has been analyzed by device simulation, proving that our backside layout design works well. Reduction in the ratio of backside N+/P+ area as well as the N buffer doping density and increase in the number of cells in chip are all proved as useful methods in reducing snapback voltage. Although some novel RCIGBT structures have been proposed to eliminate the snapback effect, most of them have been based on a single cell structure, which is not sufficient for the analysis of RCIGBT. It’s more practical and feasible in production to simply optimize the backside layout design of N+, P+ short area with the multiple cell RCIGBT structure. Here we will report on the analysis of the snapback effect and the backside optimum layout design for the multiple cell RCIGBT.

元の言語English
ページ(範囲)299-303
ページ数5
ジャーナルLecture Notes in Engineering and Computer Science
2239
出版物ステータスPublished - 2019 1 1
イベント2019 International MultiConference of Engineers and Computer Scientists, IMECS 2019 - Kowloon, Hong Kong
継続期間: 2019 3 132019 3 15

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Doping (additives)
Electric potential

ASJC Scopus subject areas

  • Computer Science (miscellaneous)

これを引用

Backside layout design of Snapback-free RCIGBT with multiple-cell. / Chang, Zhongke; Zhu, Xiaofei; Inuishi, Masahide.

:: Lecture Notes in Engineering and Computer Science, 巻 2239, 01.01.2019, p. 299-303.

研究成果: Conference article

@article{bb4f262bef1b4a93a863c52abcec927a,
title = "Backside layout design of Snapback-free RCIGBT with multiple-cell",
abstract = "—A backside layout design for multiple cell RCIGBT is proposed to suppress the snapback effect which happens in the turn-on process of RCIGBT in this paper. The internal operation mechanism of RCIGBT has been analyzed by device simulation, proving that our backside layout design works well. Reduction in the ratio of backside N+/P+ area as well as the N buffer doping density and increase in the number of cells in chip are all proved as useful methods in reducing snapback voltage. Although some novel RCIGBT structures have been proposed to eliminate the snapback effect, most of them have been based on a single cell structure, which is not sufficient for the analysis of RCIGBT. It’s more practical and feasible in production to simply optimize the backside layout design of N+, P+ short area with the multiple cell RCIGBT structure. Here we will report on the analysis of the snapback effect and the backside optimum layout design for the multiple cell RCIGBT.",
keywords = "Backside layout, Multiple cell, RCIGBT, Snapback",
author = "Zhongke Chang and Xiaofei Zhu and Masahide Inuishi",
year = "2019",
month = "1",
day = "1",
language = "English",
volume = "2239",
pages = "299--303",
journal = "Lecture Notes in Engineering and Computer Science",
issn = "2078-0958",

}

TY - JOUR

T1 - Backside layout design of Snapback-free RCIGBT with multiple-cell

AU - Chang, Zhongke

AU - Zhu, Xiaofei

AU - Inuishi, Masahide

PY - 2019/1/1

Y1 - 2019/1/1

N2 - —A backside layout design for multiple cell RCIGBT is proposed to suppress the snapback effect which happens in the turn-on process of RCIGBT in this paper. The internal operation mechanism of RCIGBT has been analyzed by device simulation, proving that our backside layout design works well. Reduction in the ratio of backside N+/P+ area as well as the N buffer doping density and increase in the number of cells in chip are all proved as useful methods in reducing snapback voltage. Although some novel RCIGBT structures have been proposed to eliminate the snapback effect, most of them have been based on a single cell structure, which is not sufficient for the analysis of RCIGBT. It’s more practical and feasible in production to simply optimize the backside layout design of N+, P+ short area with the multiple cell RCIGBT structure. Here we will report on the analysis of the snapback effect and the backside optimum layout design for the multiple cell RCIGBT.

AB - —A backside layout design for multiple cell RCIGBT is proposed to suppress the snapback effect which happens in the turn-on process of RCIGBT in this paper. The internal operation mechanism of RCIGBT has been analyzed by device simulation, proving that our backside layout design works well. Reduction in the ratio of backside N+/P+ area as well as the N buffer doping density and increase in the number of cells in chip are all proved as useful methods in reducing snapback voltage. Although some novel RCIGBT structures have been proposed to eliminate the snapback effect, most of them have been based on a single cell structure, which is not sufficient for the analysis of RCIGBT. It’s more practical and feasible in production to simply optimize the backside layout design of N+, P+ short area with the multiple cell RCIGBT structure. Here we will report on the analysis of the snapback effect and the backside optimum layout design for the multiple cell RCIGBT.

KW - Backside layout

KW - Multiple cell

KW - RCIGBT

KW - Snapback

UR - http://www.scopus.com/inward/record.url?scp=85065801216&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065801216&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:85065801216

VL - 2239

SP - 299

EP - 303

JO - Lecture Notes in Engineering and Computer Science

JF - Lecture Notes in Engineering and Computer Science

SN - 2078-0958

ER -